Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric

被引：7

作者：

Chen, Shuai ^{[1
]}

Liu, Zhengtang ^{[1
]}

Feng, Liping ^{[1
]}

Che, Xingsen ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 02期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; HFO2; GROWTH;

D O I：

10.1007/s10854-013-1640-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The undoped and cerium-doped hafnium oxide (HfO2) thin films have been deposited on p-type single crystal Si(100) substrates using radio frequency magnetron sputtering method. The structure and electrical properties have been investigated as a function of doping concentration. The results show that cerium serves effectively as a dopant to induce the crystallographic change from the monoclinic to the cubic phase. The ceium-doped HfO2 shows higher dielectric constant than undoped HfO2. The dielectric constant enhancement can be explained by the shrinkage of molar volume and the increase of molar polarizability. Compared with undoped HfO2, the cerium-doped HfO2 exhibits a lower leakage current due to the decrease of the oxygen vacancies number.

引用

页码：749 / 753

页数：5