Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric

被引：7

作者：

Chen, Shuai ^{[1
]}

Liu, Zhengtang ^{[1
]}

Feng, Liping ^{[1
]}

Che, Xingsen ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2014年 / 25卷 / 02期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; HFO2; GROWTH;

D O I：

10.1007/s10854-013-1640-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The undoped and cerium-doped hafnium oxide (HfO2) thin films have been deposited on p-type single crystal Si(100) substrates using radio frequency magnetron sputtering method. The structure and electrical properties have been investigated as a function of doping concentration. The results show that cerium serves effectively as a dopant to induce the crystallographic change from the monoclinic to the cubic phase. The ceium-doped HfO2 shows higher dielectric constant than undoped HfO2. The dielectric constant enhancement can be explained by the shrinkage of molar volume and the increase of molar polarizability. Compared with undoped HfO2, the cerium-doped HfO2 exhibits a lower leakage current due to the decrease of the oxygen vacancies number.

引用

页码：749 / 753

页数：5

共 21 条

[1] Permittivity enhancement of hafnium dioxide high-κ films by cerium doping [J].

Chalker, P. R. ;

Werner, M. ;

Romani, S. ;

Potter, R. J. ;

Black, K. ;

Aspinall, H. C. ;

Jones, A. C. ;

Zhao, C. Z. ;

Taylor, S. ;

Heys, P. N. .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[2] Effects of Y doping on the structural stability and defect properties of cubic HfO2 [J].

Chen, G. H. ;

Hou, Z. F. ;

Gong, X. G. ;

Li, Quan .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)

[3] The dielectric properties enhancement due to Yb incorporation into HfO2 [J].

Chen, Shuai ;

Liu, Zhengtang ;

Feng, Liping ;

Che, Xingsen ;

Zhao, Xiaoru .

APPLIED PHYSICS LETTERS, 2013, 103 (13)

[4] Development of hafnium based high-k materials-A review [J].

Choi, J. H. ;

Mao, Y. ;

Chang, J. P. .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2011, 72 (06) :97-136

[5] Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si [J].

Dai, JY ;

Lee, PF ;

Wong, KH ;

Chan, HLW ;

Choy, CL .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (02) :912-915

[6] Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices [J].

Govindarajan, S. ;

Boescke, T. S. ;

Sivasubramani, P. ;

Kirsch, P. D. ;

Lee, B. H. ;

Tseng, H.-H. ;

Jammy, R. ;

Schroeder, U. ;

Ramanathan, S. ;

Gnade, B. E. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[7] Oxygen vacancies in high dielectric constant oxide-semiconductor films [J].

Guha, Supratik ;

Narayanan, Vijay .

PHYSICAL REVIEW LETTERS, 2007, 98 (19)

[8]

Hergenrother J.M., 2001, IEDM, p3.1.1

[9] Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator [J].

Ji Mei ;

Wang Lei ;

Xiong Yuhua ;

Du Jun .

JOURNAL OF RARE EARTHS, 2010, 28 (03) :396-398

[10] Permittivity increase of yttrium-doped HfO2 through structural phase transformation -: art. no. 102906 [J].

Kita, K ;

Kyuno, K ;

Toriumi, A .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3

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