Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods

被引:61
|
作者
Cheng, An-Jen [2 ]
Tzeng, Yonhua [2 ,3 ]
Xu, Hui [1 ]
Alur, Siddharth [1 ]
Wang, Yaqi [1 ]
Park, Minseo [1 ]
Wu, Tsung-hsueh [4 ]
Shannon, Curtis [4 ]
Kim, Dong-Joo [5 ]
Wang, Dake [6 ]
机构
[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
[2] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[3] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[4] Auburn Univ, Dept Chem & Biochem, Auburn, AL 36849 USA
[5] Auburn Univ, Mat Res & Educ Ctr, Dept Mech Engn, Auburn, AL 36849 USA
[6] Furman Univ, Dept Phys, Greenville, SC 29613 USA
基金
美国国家科学基金会;
关键词
PHOTOLUMINESCENCE; SCATTERING; RESONANCE; NANOWIRES; LIGHT;
D O I
10.1063/1.3093877
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic properties of vertically aligned ZnO nanorods have been investigated using micro-Raman spectroscopy. The concentration and mobility of the charge carriers were determined via Raman line shape analysis using longitudinal-optical-phonon-plasmon coupled mode. The local laser heating and the stress effects have been considered when analyzing the Raman spectra. The mobility and carrier concentration of the aligned ZnO nanorods are 84.8 cm(2)/V s and 3.8 x 10(17) cm(-3), respectively. As a comparison, the mobility and carrier concentration of the undoped bulk ZnO were also obtained from the Raman line shape analysis. The mobility of the aligned ZnO nanorods is about 20% lower than that of the undoped bulk ZnO, which can be attributed to enhanced surface scattering due to the reduction in dimension. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3093877]
引用
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页数:7
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