Heterogeneous lasers and coupling to Si3N4 near 1060 nm

被引：20

作者：

Bovington, J. T. ^{[1
]}

Heck, M. J. R. ^{[1
]}

Bowers, J. E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

OPTICS LETTERS | 2014年 / 39卷 / 20期

关键词：

SILICON;

D O I：

10.1364/OL.39.006017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A III-V/Si3N4 platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si3N4 are measured to be 2.5 +/- 0.75 dB. (C) 2014 Optical Society of America

引用

页码：6017 / 6020

页数：4

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