Temperature-controlled growth and photoluminescence of AlN nanowires

被引：24

作者：

Kim, Hyoun Woo ^{[1
]}

Kebede, Mesfin Abayneh ^{[1
]}

Kim, Hyo Sung ^{[1
]}

机构：

[1] Inha Univ, Div Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 16期

关键词：

Nanowires; AlN; Temperature; ALUMINUM NITRIDE NANOWIRES; LIQUID-SOLID GROWTH;

D O I：

10.1016/j.apsusc.2009.03.076

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By varying the substrate temperature in the range of 800-1000 degrees C, the conditions for the synthesis of AlN nanowires were optimized. Al powders were heated under flowing ammonia gas. The samples were characterized by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence (PL) spectroscopy. Based on the absence of tip particles, the growth mechanism of AlN nanowires was considered to follow a vapor-solid process. The overall intensity of the PL spectra was increased by increasing the synthesis temperature, whereas their shapes were changed by varying the synthesis temperature. The associated emission mechanisms are discussed. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：7221 / 7225

页数：5

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