Distinguishability of N composition profiles in SiON films on Si by angle-resolved x-ray photoelectron spectroscopy

被引:17
作者
Powell, C. J. [1 ]
Werner, W. S. M.
Smekal, W.
机构
[1] NIST, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA
[2] Vienna Tech Univ, Inst Allgemeine Phys, A-1040 Vienna, Austria
关键词
SILICON OXYNITRIDE FILMS; DEPTH-PROFILE; DIELECTRIC LAYERS; ELECTRON-SPECTRA; XPS; MICROELECTRONICS; SIMULATION; SCATTERING; CHEMISTRY; NITROGEN;
D O I
10.1063/1.2363955
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoelectron intensities of N 1s and O 1s peaks at selected emission angles are reported for a SiON film on Si with different assumed amounts and distributions of N in the film. The intensities were determined from an efficient simulation tool for x-ray photoelectron spectroscopy (XPS) that incorporates appropriate values of elastic- and inelastic-scattering parameters in each region of the specimen as well as the finite angular acceptance of the analyzer. Appreciable dispersion of the intensities was found only for the N 1s peak at an emission angle of 75 degrees (with respect to the surface normal). Conventional analyses of angle-resolved XPS data that include such large emission angles are unlikely to be valid due to angle-dependent changes of the attenuation length. (c) 2006 American Institute of Physics.
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页数:3
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