Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces

被引：5
|
作者：
Sharma, P. [1 ]
Milakovich, T. [1 ]
Bulsara, M. T. [1 ]
Fitzgerald, E. A. [1 ]
机构：
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期
关键词：
GE;
D O I：
10.1149/05009.0333ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
High quality epitaxial growth of GaAs(x)P(1-)x on SiyGe1-y templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsxP1-x/Si1-yGey interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsxP1-x and Si1-yGey alloys on the overall defect morphology.
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页码：333 / 337
页数：5
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