GaN/SiC quasi-substrates for GaN-based LEDs

GaN/SiC templates are evaluated as quasi-substrates for GaN device:technology. The GaN/SiC templates offer quasi-homoepitaxial growth conditions and benefit from general advantages of SIC substrates, i.e vertical device design; high thermal conductivity: low processing costs, etc. The thin HVPE-deposited GaN layers significantly reduce thermal stress, bowing and cracking as compared to thick GaN/sapphire quasi-substrates. The templates are assessed from the performance of MOVPE grown UV-emitting GaN/InGaN double heterostructure LEDs. The LEDs are grown directly on the quasi-substrates using parameters established for GaN/sapphire, technology Compared to InGaN/GaN/sapphire LEDs narrower electroluminescence and higher output powers are obtained.