GaN/SiC quasi-substrates for GaN-based LEDs

被引:0
作者
Schwegler, V [1 ]
Kirchner, C
Seyboth, M
Kamp, M
Ebeling, KJ
Melnik, YV
Nikolaev, AE
Tsvetkov, D
Dmitriev, VA
机构
[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany
[2] TDI Inc, Gaithersburg, MD 20877 USA
[3] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[4] Crystal Growth Res Ctr, St Petersburg 194021, Russia
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期
关键词
D O I
10.1002/(SICI)1521-396X(199911)176:1<99::AID-PSSA99>3.3.CO;2-V
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
GaN/SiC templates are evaluated as quasi-substrates for GaN device:technology. The GaN/SiC templates offer quasi-homoepitaxial growth conditions and benefit from general advantages of SIC substrates, i.e vertical device design; high thermal conductivity: low processing costs, etc. The thin HVPE-deposited GaN layers significantly reduce thermal stress, bowing and cracking as compared to thick GaN/sapphire quasi-substrates. The templates are assessed from the performance of MOVPE grown UV-emitting GaN/InGaN double heterostructure LEDs. The LEDs are grown directly on the quasi-substrates using parameters established for GaN/sapphire, technology Compared to InGaN/GaN/sapphire LEDs narrower electroluminescence and higher output powers are obtained.
引用
收藏
页码:99 / 102
页数:4
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