The role of band alignment in p-type conductivity of Na-doped ZnMgO: Polar versus non-polar

被引：20

作者：

Zhang, H. H. ^{[1
]}

Pan, X. H. ^{[1
]}

Li, Y. ^{[1
]}

Ye, Z. Z. ^{[1
]}

Lu, B. ^{[1
]}

Chen, W. ^{[1
]}

Huang, J. Y. ^{[1
]}

Ding, P. ^{[1
]}

Chen, S. S. ^{[1
]}

He, H. P. ^{[1
]}

Lu, J. G. ^{[1
]}

Chen, L. X. ^{[1
]}

Ye, C. L. ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

基金：

中国国家自然科学基金; 国家教育部博士点专项基金资助;

关键词：

MOLECULAR-BEAM EPITAXY; PLANE ZNO FILMS; GROWTH; OFFSETS; DEVICES;

D O I：

10.1063/1.4869481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the electrical properties of polar and non-polar ZnMgO:Na films that have been fabricated on c-plane and r-plane sapphire substrates using intervened ZnO layers (10-30nm thick) by pulsed laser deposition. Hall-effect measurements indicate that the a-plane ZnMgO:Na film exhibits p-type conductivity with a carrier concentration of about 3.5 x 10(16) cm(-3), while the polar film shows a compensatory conductivity. Meanwhile, the dependence of the band alignment on the orientation of the ZnMgO/ZnO heterojunctions has been investigated using photoelectron spectroscopy. The heterojunctions form in the type-I straddling alignment with valence band offsets of 0.07 (0.02) eV for the (non-)polar heterojunction. The difference in valence band offsets is primarily attributed to the spontaneous polarization effect. We propose that the smaller valence band offsets and larger conduction band offsets would reduce the Na-Zn acceptor level and enhance the relative intrinsic donor levels. Such effects consequently lead to p-type conductivity in non-polar ZnMgO:Na films. The band alignment of non-polar ZnMgO/ZnO can be used to facilitate p-type doping with a shallower acceptor state in the ZnO-like alloy. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 22 条

[1] Doping Asymmetry Problem in ZnO: Current Status and Outlook [J].

Avrutin, Vitaliy ;

Silversmith, Donald J. ;

Morkoc, Hadis .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1269-1280

[2] Recent Advances in ZnO-Based Light-Emitting Diodes [J].

Choi, Yong-Seok ;

Kang, Jang-Won ;

Hwang, Dae-Kue ;

Park, Seong-Ju .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) :26-41

[3] Realization of p-type non-polar a-plane ZnO films via doping of Na acceptor [J].

Ding, P. ;

Pan, X. H. ;

Ye, Z. Z. ;

Huang, J. Y. ;

Zhang, H. H. ;

Chen, W. ;

Zhu, C. Y. .

SOLID STATE COMMUNICATIONS, 2013, 156 :8-11

[4] p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxy [J].

Ding, P. ;

Pan, X. H. ;

Huang, J. Y. ;

He, H. P. ;

Lu, B. ;

Zhang, H. H. ;

Ye, Z. Z. .

JOURNAL OF CRYSTAL GROWTH, 2011, 331 (01) :15-17

[5] Growth of p-type a-plane ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy [J].

Ding, Ping ;

Pan, Xinhua ;

Huang, Jingyun ;

Lu, Bin ;

Zhang, Honghai ;

Chen, Wei ;

Ye, Zhizhen .

MATERIALS LETTERS, 2012, 71 :18-20

[6] p-Type ZnO materials: Theory, growth, properties and devices [J].

Fan, J. C. ;

Sreekanth, K. M. ;

Xie, Z. ;

Chang, S. L. ;

Rao, K. V. .

PROGRESS IN MATERIALS SCIENCE, 2013, 58 (06) :874-985

[7] Nonpolar (11(2)over-bar0) p-type nitrogen-doped ZnO by remote-plasma-enhanced metalorganic chemical vapor deposition [J].

Gangil, Sandip ;

Nakamura, Atsushi ;

Shimomura, Masaru ;

Temmyo, Jiro .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (20-24) :L549-L551

[8] Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy [J].

King, P. D. C. ;

Veal, T. D. ;

Jefferson, P. H. ;

McConville, C. F. ;

Wang, T. ;

Parbrook, P. J. ;

Lu, Hai ;

Schaff, W. J. .

APPLIED PHYSICS LETTERS, 2007, 90 (13)

[9] Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers [J].

Lautenschlaeger, Stefan ;

Eisermann, Sebastian ;

Hofmann, Michael N. ;

Roemer, Udo ;

Pinnisch, Melanie ;

Laufer, Andreas ;

Meyer, Bruno K. ;

von Wenckstern, Holger ;

Lajn, Alexander ;

Schmidt, Florian ;

Grundmann, Marius ;

Blaesing, Juergen ;

Krost, Alois .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (14) :2078-2082

[10] Design of shallow acceptors in ZnO: First-principles band-structure calculations [J].

Li, Jingbo ;

Wei, Su-Huai ;

Li, Shu-Shen ;

Xia, Jian-Bai .

PHYSICAL REVIEW B, 2006, 74 (08)

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