Dual complexing agents;
Silver nanoparticles;
Percolation effect;
Enhancement of permittivity;
DIELECTRIC-PROPERTIES;
FT-IR;
AG NANOPARTICLES;
COMPOSITE;
EXCESS;
PB;
D O I:
10.1016/j.tsf.2014.02.081
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Controlling the formation of conductive particles to be nano-scale is important for achieving percolation effect in metal dispersed thin film composite to contribute extraordinary dielectric properties required for miniaturization of electronic devices. In this paper, lactic acid (LA) and citric acid (CA) were used as dual complexing agents to prepare a typical Ag nanoparticle dispersed PbTiO3 (PTO) composite thin film by using a sol-gel method. The phase structure of the thin film and the coordination effect between complexing agent and metallic ions were investigated. It revealed that LA coordinated with Ti4+ and Pb2+ and CA coordinated with Ag+. Lead was fixed inside the gel network by LA and restricted to evaporate during heat treatment thus the pyrochlore phase was prevented from forming in the thin film. Ag+ was coordinated by CA and the diffusion and thus aggregation of silver during gelation and annealing process were weakened. Silver nanoparticles dispersed in the PTO matrix formed with dual complexing agents of LA and CA introduced during the preparation process. The composite thin film of perfect perovskite phase with silver nanoparticles embedded was obtained at the molar ratio of LA/lead = 0.5 and CA/lead = 0.5. The dielectric constant of the thin film with silver nanoparticles is 5 times higher than that without silver nanoparticles. (C) 2014 Elsevier B.V. All rights reserved.
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Chen, Qian
Du, Piyi
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Du, Piyi
Jin, Lu
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Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Jin, Lu
Weng, Wenjian
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机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Weng, Wenjian
Han, Gaorong
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机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Chen, Qian
Du, Piyi
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Du, Piyi
Jin, Lu
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Jin, Lu
Weng, Wenjian
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China
Weng, Wenjian
Han, Gaorong
论文数: 0引用数: 0
h-index: 0
机构:
Zhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, Dept Mat Sci & Engn, State Key Silicon Mat, Hangzhou 310027, Peoples R China