Electronic properties of hafnium oxide: A contribution from defects and traps

被引：154
作者：
Gritsenko, Vladimir A.
Perevalov, Timofey V.
Islamov, Damir R. [1 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS | 2016年 / 613卷
基金：
俄罗斯科学基金会;
关键词：
Hafnium oxide; Defects; Oxygen vacancy; Electronic structure; Luminescence; Charge transport; Traps; HFO2; THIN-FILMS; DIELECTRIC-CONSTANT; OXYGEN VACANCIES; SILICON-NITRIDE; NONVOLATILE MEMORY; OPTICAL-ABSORPTION; CURRENT TRANSPORT; GATE DIELECTRICS; LEAKAGE CURRENT; ZRO2;
D O I：
10.1016/j.physrep.2015.11.002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In the present article, we give a review of modern data and latest achievements pertaining to the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a key dielectric for use in many advanced silicon devices. Oxygen vacancies in hafnium oxide largely determine the electronic properties of the material. We show that the electronic transitions between the states due to oxygen vacancies largely determine the optical absorption and luminescent properties of hafnium oxide. We discuss the role of oxygen vacancies as traps that facilitate charge transport in hafnium oxide films. Also, we demonstrate the fact that the electrical conductivity in hafnium oxide is controlled by the phonon-assisted tunnelling of charge carriers between traps that were identified as oxygen vacancies. (C) 2015 Elsevier B.V. All rights reserved.
引用
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页码：1 / 20
页数：20
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