Presence of Peierls pairing and absence of insulator-to-metal transition in VO2 ( A): a structure-property relationship study

被引:13
作者
Popuri, S. R. [1 ,2 ,3 ]
Artemenko, A. [1 ,2 ]
Decourt, R. [1 ,2 ]
Villesuzanne, A. [1 ,2 ]
Pollet, M. [1 ,2 ]
机构
[1] CNRS, ICMCB, UPR 9048, F-33600 Pessac, France
[2] Univ Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, France
[3] INCEMC, Plautius Andronescu 1, Timisoara 300224, Romania
基金
欧盟第七框架计划;
关键词
PHASE-TRANSITION; CONDUCTIVITY; MECHANISM; DRIVEN;
D O I
10.1039/c7cp00248c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Layered vanadium oxides have been extensively explored due to their interesting metal-insulator transitions and energy conversion/storage applications. In the present study, we have successfully synthesized VO2 (A) polymorph powder samples by a single-step hydrothermal synthesis process and consolidated them using spark plasma sintering. The structural and electronic properties of VO2 (A) are measured over a large temperature range from liquid helium, across the structural transition (400-440 K) and up to 500 K. The structural analysis around this transition reveals an antiferrodistorsive to partially ferrodistorsive ordering upon cooling. It is followed by a progressive antiferromagnetic spin pairing which fully settles at about 150 K. The transport measurements show that, in contrast to the rutile archetype VO2 (R/M1), the structural transition comes with a transition from semiconductor to band-type insulator. Under these circumstances, we propose a scenario with a high temperature antiferrodistorsive paramagnetic semiconducting phase, followed by an intermediate regime with a partially ferrodistorsive paramagnetic semiconducting phase, and finally a low temperature partially ferrodistorsive antiferromagnetic band insulator phase with a possible V-V Peierls-type pairing.
引用
收藏
页码:6601 / 6609
页数:9
相关论文
共 36 条
[1]   Pressure-induced phase transitions and metallization in VO2 [J].
Bai, Ligang ;
Li, Quan ;
Corr, Serena A. ;
Meng, Yue ;
Park, Changyong ;
Sinogeikin, Stanislav V. ;
Ko, Changhyun ;
Wu, Junqiao ;
Shen, Guoyin .
PHYSICAL REVIEW B, 2015, 91 (10)
[2]   Metallization of vanadium dioxide driven by large phonon entropy [J].
Budai, John D. ;
Hong, Jiawang ;
Manley, Michael E. ;
Specht, Eliot D. ;
Li, Chen W. ;
Tischler, Jonathan Z. ;
Abernathy, Douglas L. ;
Said, Ayman H. ;
Leu, Bogdan M. ;
Boatner, Lynn A. ;
McQueeney, Robert J. ;
Delaire, Olivier .
NATURE, 2014, 515 (7528) :535-+
[3]   Pressure-induced metallization and amorphization in VO2(A) nanorods [J].
Cheng, Benyuan ;
Li, Quanjun ;
Zhang, Huafang ;
Liu, Ran ;
Liu, Bo ;
Yao, Zhen ;
Cui, Tian ;
Liu, Jing ;
Liu, Zhenxian ;
Sundqvist, Bertil ;
Liu, Bingbing .
PHYSICAL REVIEW B, 2016, 93 (18)
[4]   Layered vanadium and molybdenum oxides: batteries and electrochromics [J].
Chernova, Natasha A. ;
Roppolo, Megan ;
Dillon, Anne C. ;
Whittingham, M. Stanley .
JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (17) :2526-2552
[5]  
Cox P.A., 1992, Transition Metal Oxides
[6]   VO2 (A) nanostructures with controllable feature sizes and giant aspect ratios: one-step hydrothermal synthesis and lithium-ion battery performance [J].
Dai, Lei ;
Gao, Yanfeng ;
Cao, Chuanxiang ;
Chen, Zhang ;
Luo, Hongjie ;
Kanehira, Minoru ;
Jin, Jun ;
Liu, Yu .
RSC ADVANCES, 2012, 2 (12) :5265-5270
[7]   THE ELECTROSTATIC POTENTIAL IN MULTIPOLE LATTICES [J].
DEWETTE, FW ;
NIJBOER, BRA .
PHYSICA, 1958, 24 (12) :1105-1118
[8]   APPARATUS FOR MEASURING THERMOELECTRIC-POWER IN HIGH-RESISTIVITY MATERIALS [J].
DORDOR, P ;
MARQUESTAUT, E ;
VILLENEUVE, G .
REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (11) :1607-1612
[9]  
Eyert V., 2002, CONDMAT0210558 ARXIV
[10]   ELECTRON-PARAMAGNETIC-RES STUDY OF VANADIUM (4+) IN THE ANATASE AND RUTILE PHASES OF TIO2 [J].
GALLAY, R ;
VANDERKLINK, JJ ;
MOSER, J .
PHYSICAL REVIEW B, 1986, 34 (05) :3060-3068