Room-temperature ferromagnetism in p-type nitrogen-doped ZnO films

被引：20
|
作者：
Nie, Xinran [1 ,2 ]
Zhang, Bin [1 ,2 ]
Wang, Jianzhong [1 ,2 ]
Shi, Liqun [1 ,2 ]
Di, Zengfeng [3 ]
Guo, Qinglei [3 ]
机构：
[1] Fudan Univ, Inst Modern Phys, Key Lab, Appl Ion Beam Phys Lab,Minist Educ, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Nucl Sci & Technol, Shanghai 200433, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源：
MATERIALS LETTERS | 2015年 / 161卷
基金：
中国国家自然科学基金;
关键词：
P-type ZnO:N film; Room-temperature ferromagnetism; V-O defects; BMPs; THERMAL-OXIDATION;
D O I：
10.1016/j.matlet.2015.08.143
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferromagnetism in p-type N-doped ZnO films, deposited on (0001) sapphire substrates by radio frequency (rf) reactive magnetron sputtering at different N-2/O-2 ratios, has been observed at room temperature. Both the p-type conduction and ferromagnetism are originated from the substitution of O with N. At the N-2/O-2 ratio of 15:15, the film displays the maximum hole density and the minimum resistivity as well as the maximum Ms. The transition from n-type to p-type strongly depends on both the substitutional nitrogen on the oxygen site (N-O) and oxygen vacancy (V-O) concentrations. The observed ferromagnetism of p-type ZnO:N films is intrinsic and strongly related to both the N-O and V-O content and can be interpreted by the bound magnetic polarons (BMPs) model. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：355 / 359
页数：5
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