Electron-phonon scattering in an etched InGaAs quantum wire

被引:8
作者
Sugaya, T
Bird, JP
Ferry, DK
Shimizu, T
Jang, KY
Ogura, M
Sugiyama, Y
Yonei, K
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST, Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki 3058568, Japan
[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[4] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[5] Shibaura Inst Technol, Minato Ku, Tokyo 1088548, Japan
关键词
electron-phonon scattering; energy relaxation time; InGaAs; quantum-wire;
D O I
10.1016/S0921-4526(01)01375-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The influence of temperature and drive current on the Shubnikov-de Haas oscillations is studied as a means to investigate the nature of the electron-phonon interaction in an etched InGaAs quantum wire. The temperature dependence of the energy-relaxation time, and the current dependence of the electron temperature, appear consistent with an energy relaxation process that is dominated by three-dimensional electron-phonon scattering. A deviation from this behavior is found in measurements performed at 1.6 K, however, and simple estimates Suggest that this may be associated with the increased importance at low temperatures of phonon confinement in the etched wire. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:99 / 103
页数:5
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