Control of excitonic absorption by thickness variation in few-layer GaSe

被引：19

作者：

Budweg, Arne ^{[1
,2
]}

Yadav, Dinesh ^{[1
,2
,4
]}

Grupp, Alexander ^{[1
,2
]}

Leitenstorfer, Alfred ^{[1
,2
]}

Trushin, Maxim ^{[1
,2
,3
]}

Pauly, Fabian ^{[1
,2
,4
]}

Brida, Daniele ^{[1
,2
,5
]}

机构：

[1] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[2] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany

[3] Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore

[4] Grad Univ, Okinawa Inst Sci & Technol, Onna, Okinawa 9040495, Japan

[5] Univ Luxembourg, Phys & Mat Sci Res Unit, 162a Ave Faiencerie, L-1511 Luxembourg, Luxembourg

来源：

PHYSICAL REVIEW B | 2019年 / 100卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

OPTICAL-PROPERTIES; GALLIUM;

D O I：

10.1103/PhysRevB.100.045404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material.

引用

页数：6

共 38 条

[31] LINEAR AND NONLINEAR OPTICAL-PROPERTIES OF SEMICONDUCTOR QUANTUM WELLS [J].