Control of excitonic absorption by thickness variation in few-layer GaSe

被引:19
作者
Budweg, Arne [1 ,2 ]
Yadav, Dinesh [1 ,2 ,4 ]
Grupp, Alexander [1 ,2 ]
Leitenstorfer, Alfred [1 ,2 ]
Trushin, Maxim [1 ,2 ,3 ]
Pauly, Fabian [1 ,2 ,4 ]
Brida, Daniele [1 ,2 ,5 ]
机构
[1] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
[2] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany
[3] Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore
[4] Grad Univ, Okinawa Inst Sci & Technol, Onna, Okinawa 9040495, Japan
[5] Univ Luxembourg, Phys & Mat Sci Res Unit, 162a Ave Faiencerie, L-1511 Luxembourg, Luxembourg
基金
新加坡国家研究基金会;
关键词
OPTICAL-PROPERTIES; GALLIUM;
D O I
10.1103/PhysRevB.100.045404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the development of functional optoelectronic devices based on a single material.
引用
收藏
页数:6
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共 38 条
[11]   FINE STRUCTURE AND MAGNETO-OPTIC EFFECTS IN EXCITON SPECTRUM OF CADMIUM SULFIDE [J].
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1961, 122 (01) :35-&
[12]   Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors [J].
Hu, PingAn ;
Wen, Zhenzhong ;
Wang, Lifeng ;
Tan, Pingheng ;
Xiao, Kai .
ACS NANO, 2012, 6 (07) :5988-5994
[13]   Single-cycle multiterahertz transients with peak fields above 10 MV/cm [J].
Junginger, F. ;
Sell, A. ;
Schubert, O. ;
Mayer, B. ;
Brida, D. ;
Marangoni, M. ;
Cerullo, G. ;
Leitenstorfer, A. ;
Huber, R. .
OPTICS LETTERS, 2010, 35 (15) :2645-2647
[14]   GaS and GaSe Ultrathin Layer Transistors [J].
Late, Dattatray J. ;
Liu, Bin ;
Luo, Jiajun ;
Yan, Aiming ;
Matte, H. S. S. Ramakrishna ;
Grayson, Matthew ;
Rao, C. N. R. ;
Dravid, Vinayak P. .
ADVANCED MATERIALS, 2012, 24 (26) :3549-3554
[15]   Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO2/Si Substrates [J].
Late, Dattatray J. ;
Liu, Bin ;
Matte, H. S. S. Ramakrishna ;
Rao, C. N. R. ;
Dravid, Vinayak P. .
ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (09) :1894-1905
[16]   Synthesis and Photoresponse of Large GaSe Atomic Layers [J].
Lei, Sidong ;
Ge, Liehui ;
Liu, Zheng ;
Najmaei, Sina ;
Shi, Gang ;
You, Ge ;
Lou, Jun ;
Vajtai, Robert ;
Ajayan, Pulickel M. .
NANO LETTERS, 2013, 13 (06) :2777-2781
[17]   OPTICAL-PROPERTIES OF THE BAND-EDGE EXCITON IN GASE CRYSTALS AT 10K [J].
LETOULLEC, R ;
PICCIOLI, N ;
CHERVIN, JC .
PHYSICAL REVIEW B, 1980, 22 (12) :6162-6170
[18]   Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers [J].
Li, Pengke ;
Appelbaum, Ian .
PHYSICAL REVIEW B, 2015, 92 (19)
[19]   Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse [J].
Li, Xufan ;
Lin, Ming-Wei ;
Puretzky, Alexander A. ;
Idrobo, Juan C. ;
Ma, Cheng ;
Chi, Miaofang ;
Yoon, Mina ;
Rouleau, Christopher M. ;
Kravchenko, Ivan I. ;
Geohegan, David B. ;
Xiao, Kai .
SCIENTIFIC REPORTS, 2014, 4
[20]   Ultrafast Photoluminescence from Graphene [J].
Lui, Chun Hung ;
Mak, Kin Fai ;
Shan, Jie ;
Heinz, Tony F. .
PHYSICAL REVIEW LETTERS, 2010, 105 (12)