Depth-resolved impact of integration process on porosity and solvent diffusion in a SiOCH low-k material

被引：8

作者：

Lepinay, M. ^{[1
,2
,3
]}

Djourelov, N. ^{[4
]}

Marinov, H. ^{[4
]}

Broussous, L. ^{[1
]}

Courouble, K. ^{[1
]}

Licitra, C. ^{[3
]}

Bertin, F. ^{[3
]}

Rouessac, V. ^{[2
]}

Ayral, A. ^{[2
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

[2] UM2, ENSCM, CNRS, Inst Europeen Membranes, F-34095 Montpellier 5, France

[3] CEA, LETI, F-38054 Grenoble 9, France

[4] INRNE BAS, Sofia 1784, Bulgaria

来源：

JOURNAL OF POROUS MATERIALS | 2014年 / 21卷 / 04期

关键词：

Low-k dielectric; Ellipso-porosimetry; Positron annihilation; Micropores; Kinetic porosimetry; ToF-SIMS; ANNIHILATION LIFETIME SPECTROSCOPY; POSITRON-ANNIHILATION; ELLIPSOMETRIC POROSIMETRY; THIN-FILMS; DIELECTRICS; HF;

D O I：

10.1007/s10934-014-9794-7

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

The impact of plasma etching and chemical wet cleaning on solvent diffusion in porous network of a SiOCH low-k dielectric material is studied. Characterization of porosity and pore size distribution by means of ellipso-porosimetry and positron annihilation lifetime spectroscopy are presented. The results are compared with solvent diffusion kinetics, measured using probe molecules of different polarity, surface energies and molecular sizes. Infrared spectroscopy, Doppler broadening of annihilation radiation and time-of-flight secondary ion mass spectrometry measurements are also performed to investigate material modifications causing variations of diffusion kinetics.

引用

页码：475 / 484

页数：10

共 32 条

[1] Determination of pore size distribution in thin films by ellipsometric porosimetry [J].