4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

被引：3

作者：

Hu, Jun ^{[1
]}

Xin, Xiaobin ^{[1
,2
]}

Alexandro, Petre ^{[2
]}

Zhao, Jian H. ^{[1
]}

VanMil, Brenda L. ^{[3
]}

Gaskill, D. Kurt ^{[3
]}

Lew, Kok-Keong ^{[3
]}

Myers-Ward, Rachael ^{[3
]}

Eddy, Charles R., Jr. ^{[3
]}

机构：

[1] Rutgers State Univ, ECE Dept, SiCLAB, 94 Brett Rd, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

[3] US Navy, Res Lab, Washington, DC 20375 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

SPAD; single photon detection efficiency; quantum efficiency; and visible blind;

D O I：

10.4028/www.scientific.net/MSF.600-603.1203

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark Current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of >4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.

引用

页码：1203 / +

页数：2

共 4 条

[1]

Beck A.L., 2006, P SPIE, V6372, p63720O

[2]

Sun Xiaoli, 2006, P SPIE, V6372

[3] In-situ measurement of nitrogen during growth of 4H-SiC by CVD [J].

Van Mil, Brenda L. ;

Lew, Kok-Keong ;

Myers-Ward, Rachael L. ;

Holm, Ronald T. ;

Gaskill, D. Kurt ;

Eddy, Charles R., Jr. .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :125-+

[4] Demonstration of 4H-SiC UV single photon counting avalanche photodiode [J].

Xin, X ;

Yan, F ;

Alexandrove, P ;

Stahle, CM ;

Hu, J ;

Matsumura, A ;

Li, X ;

Weiner, A ;

Zhao, HJ .

ELECTRONICS LETTERS, 2005, 41 (04) :212-214

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