Hydrogen-induced crystallization of amorphous silicon clusters in a plasma reactor

被引:11
作者
Brulin, Q. [1 ]
Ning, N. [1 ]
Vach, H. [1 ]
机构
[1] Ecole Polytech, CNRS, Phys Interfaces & Couches Minces Lab, UMR 7647, F-91128 Palaiseau, France
关键词
silicon; crystal growth; nanocrystals; molecular dynamics; molecular orbital; nanoclusters; nanoparticles;
D O I
10.1016/j.jnoncrysol.2006.01.049
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present study, the mechanism of hydrogenated silicon particle nucleation in a plasma reactor is investigated using quantum molecular dynamics (MD) simulations. We can realistically simulate the nanoparticle growth in the plasma by successive collisions of SiH3 and SiH4 molecules at room temperature impact energies. Our method permits the simulation of the experimental plasma reactions more realistically than most former investigations, which were mainly limited to minimum energy searches to determine possible Si,H structures, neglecting all dynamical effects of the cluster growth. Consequently, even the formation of metastable amorphous structures (as during powder formation) can be simulated with our method. Our simulations show that cluster growth in a pure silane plasma at room temperature always leads to amorphous silicon structures that are very rich in hydrogen. By exposing those amorphous clusters to atomic hydrogen, however, we observe their crystallization. During the atomic hydrogen exposure, the nanostructures pass through multiple metastable configurations until they eventually fall into a minimum energy configuration. In this case, we obtain Si,,H structures that correspond remarkably well to the minimum energy structures predicted by ab initio calculations. To evaluate this striking result more quantitatively, we display the corresponding atomic radial distribution functions. The present method is a new way to investigate realistic nanostructure growth in a less empirical and thus more realistic manner. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1055 / 1058
页数:4
相关论文
共 50 条
  • [41] Laser crystallization of compensated hydrogenated amorphous silicon thin films
    Saleh, R.
    Nickel, N. H.
    Maydell, K. V.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1003 - 1007
  • [42] Enhanced metal-induced-crystallization of hydrogenated amorphous silicon by electric field
    C.-M. Hsu
    I.-F. Chen
    W.-T. Wu
    Applied Physics A, 2005, 81 : 1241 - 1244
  • [43] Boron Induced Crystallization of Silicon on Glass: an Alternate Way to Crystallize Amorphous Silicon Films for Solar Cells
    Juneja, Sucheta
    Kumar, Sushil
    SILICON, 2022, 14 (16) : 10459 - 10466
  • [44] Boron Induced Crystallization of Silicon on Glass: an Alternate Way to Crystallize Amorphous Silicon Films for Solar Cells
    Sucheta Juneja
    Sushil Kumar
    Silicon, 2022, 14 : 10459 - 10466
  • [45] Raman scattering study on hydrogen-induced defects in silicon used in the ion-cut process
    Socher, S.
    Lavrov, E. V.
    Weber, J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, 2012, 9 (10-11): : 2013 - 2016
  • [46] On the hydrogen in hydrogen-containing amorphous silicon
    Hansen, Eddy Walther
    Kjekshus, Arne
    Odden, Jan Ove
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (28) : 2734 - 2743
  • [47] Understanding the effects of stress on the crystallization of amorphous silicon
    Cai, Li
    Zou, Min
    Abu-Safe, Husam
    Naseem, Hameed
    Brown, William
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (03) : 191 - 196
  • [48] Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon
    Ruffell, S.
    Vedi, J.
    Bradby, J. E.
    Williams, J. S.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [49] Role of lattice softening in hydrogen-induced amorphization
    Katagiri, M
    Onodera, H
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 2000, 64 (05) : 287 - 290
  • [50] Understanding the Effects of Stress on the Crystallization of Amorphous Silicon
    Li Cai
    Min Zou
    Husam Abu-Safe
    Hameed Naseem
    William Brown
    Journal of Electronic Materials, 2007, 36 : 191 - 196