Hydrogen-induced crystallization of amorphous silicon clusters in a plasma reactor

被引:11
作者
Brulin, Q. [1 ]
Ning, N. [1 ]
Vach, H. [1 ]
机构
[1] Ecole Polytech, CNRS, Phys Interfaces & Couches Minces Lab, UMR 7647, F-91128 Palaiseau, France
关键词
silicon; crystal growth; nanocrystals; molecular dynamics; molecular orbital; nanoclusters; nanoparticles;
D O I
10.1016/j.jnoncrysol.2006.01.049
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In the present study, the mechanism of hydrogenated silicon particle nucleation in a plasma reactor is investigated using quantum molecular dynamics (MD) simulations. We can realistically simulate the nanoparticle growth in the plasma by successive collisions of SiH3 and SiH4 molecules at room temperature impact energies. Our method permits the simulation of the experimental plasma reactions more realistically than most former investigations, which were mainly limited to minimum energy searches to determine possible Si,H structures, neglecting all dynamical effects of the cluster growth. Consequently, even the formation of metastable amorphous structures (as during powder formation) can be simulated with our method. Our simulations show that cluster growth in a pure silane plasma at room temperature always leads to amorphous silicon structures that are very rich in hydrogen. By exposing those amorphous clusters to atomic hydrogen, however, we observe their crystallization. During the atomic hydrogen exposure, the nanostructures pass through multiple metastable configurations until they eventually fall into a minimum energy configuration. In this case, we obtain Si,,H structures that correspond remarkably well to the minimum energy structures predicted by ab initio calculations. To evaluate this striking result more quantitatively, we display the corresponding atomic radial distribution functions. The present method is a new way to investigate realistic nanostructure growth in a less empirical and thus more realistic manner. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:1055 / 1058
页数:4
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