SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE

被引：13

作者：

Boieriu, P

Sporken, R

Adriaens, A

Xin, Y

Browning, ND

Sivananthan, S

机构：

[1] Univ Instelling Antwerp, Dept Chem, B-2610 Wilrijk, Belgium

[2] Univ Illinois, Dept Phys MC 273, Microphys Lab, Chicago, IL 60607 USA

[3] Fac Univ Notre Dame Paix, Lab Interdisciplinaire Spect Elect, B-5000 Namur, Belgium

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷

关键词：

solar cells; CdS/CdTe; molecular beam epitaxy; SIMS;

D O I：

10.1016/S0168-583X(99)00926-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this study we have grown epitaxial layers of wurtzite-CdS on CdTe((111) over bar)B/Si substrates using molecular beam epitaxy. Indium was used to obtain n-type doping of CdS. The concentration and uniformity of In was determined by secondary ion mass spectrometry (SIMS). Indium profiles were obtained for concentrations ranging from 5 x 10(17) to 1.4 x 10(21) cm(-3) and agree well with the variation expected from the In flux. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：975 / 979

页数：5

共 6 条

[1] ARIAS JM, 1990, J VAC SCI TECHNOL A, V8, P1125
[2] LUMINESCENCE CHARACTERIZATION OF CDTE-IN GROWN BY MOLECULAR-BEAM EPITAXY
BASSANI, F
TATARENKO, S
SAMINADAYAR, K
BLEUSE, J
MAGNEA, N
PAUTRAT, JL
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (23) : 2651 - 2653
[3] BOIERIU P, IN PRESS J ELECT MAT
[4] BAND OFFSETS AND INTERFACIAL PROPERTIES OF CUBIC CDS GROWN BY MOLECULAR-BEAM EPITAXY ON CDTE(110)
NILES, DW
HOCHST, H
[J]. PHYSICAL REVIEW B, 1990, 41 (18): : 12710 - 12719
[5] HARTREE-SLATER SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AT 1254 AND 1487EV
SCOFIELD, JH
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (02) : 129 - 137
[6] VALENCE-BAND OFFSET AND INTERFACE CHEMISTRY OF CDS/INP(110)
WILKE, WG
SEEDORF, R
HORN, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 807 - 814

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