High quality AlN for deep UV photodetectors

被引：48

作者：

Nikishin, S. ^{[1
,2
]}

Borisov, B. ^{[1
,2
]}

Pandikunta, M. ^{[1
,2
]}

Dahal, R. ^{[1
,2
,5
]}

Lin, J. Y. ^{[1
,2
]}

Jiang, H. X. ^{[1
,2
]}

Harris, H. ^{[3
]}

Holtz, M. ^{[2
,4
]}

机构：

[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

[2] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

[3] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[5] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; dark conductivity; III-V semiconductors; metal-semiconductor-metal structures; molecular beam epitaxial growth; nucleation; photodetectors; semiconductor growth; semiconductor superlattices; ultraviolet detectors; DEFECT STRUCTURE; EPITAXIAL GAN;

D O I：

10.1063/1.3200229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have prepared large-area, 0.50x0.55 mm(2), metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN/GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 10(6) cm(-2) exhibit a very low dark current of 0.5 fA at zero bias, which remains below 50 fA up to a bias of +/- 30 V. The peak responsivity of 0.08 A/W was obtained at a wavelength of similar to 202 nm.

引用

页数：3

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