6H-SiC P+N junctions fabricated by beryllium implantation

被引：22

作者：

Ramungul, N ^{[1
]}

Khemka, V ^{[1
]}

Zheng, YP ^{[1
]}

Patel, R ^{[1
]}

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 03期

关键词：

beryllium; ion-implantation; photoluminescence; rectifier; SiC; 6H-SiC;

D O I：

10.1109/16.748863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of beryllium (Be) as an alternate p-type dopant for implanted silicon carbide (SIC) p(+)n junctions is experimentally demonstrated. The implanted layers have been characterized with photoluminescence (PL) as well as secondary ion mass spectrometry (SIMS) measurements, In comparison with boron implanted p(+)-n junctions, Be-implanted junctions show improvement in the forward characteristics while exhibiting slightly higher reverse leakages. The activation energies extracted from the forward conduction and reverse leakage characteristics of the Be-diodes are 1.5 eV, and 0.13 eV, respectively. Moreover, activation energy extraction in the forward ohmic region reveals the Be impurity level at 0.38+/-0.04 eV, The minority carrier lifetime extracted from reverse recovery measurements is as high as 160 ns for the Be-diodes compared to 82 ns obtained for the B-diodes.

引用

页码：465 / 470

页数：6

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