Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures

被引：33

作者：

Polyakov, V. M. ^{[1
]}

Schwierz, F. ^{[1
]}

Cimalla, I. ^{[2
]}

Kittler, M. ^{[2
]}

Luebbers, B. ^{[2
]}

Schober, A. ^{[2
]}

机构：

[1] Tech Univ Ilmenau, Fachgebiet Festkorperelekt, D-98684 Ilmenau, Germany

[2] Tech Univ Ilmenau, Inst Mikro & Nanotechnologien, D-98684 Ilmenau, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 02期

关键词：

MONTE-CARLO-SIMULATION; PHONON-SCATTERING; TRANSPORT; DYNAMICS; HEMTS;

D O I：

10.1063/1.3174441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the intrinsically limited low-field mobility of the two-dimensional electron gas (2DEG) in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures. Monte Carlo transport simulations are carried out to calculate the room-temperature 2DEG mobilities in dependence on the electron sheet density. The simulated 2DEG mobilities are compared to the phonon-limited mobility of bulk GaN. We estimate a maximum 2DEG mobility of about 2700 cm(2) V-1 s(-1) for an electron sheet density of similar to 5 x 10(12) cm(-2), which remarkably exceeds the phonon-limited bulk mobility of 1520 cm(2) V-1 s(-1). By reducing the electron sheet density below 5 x 10(12) cm(-2), i.e., in a weak electron quantum confinement regime, the room-temperature 2DEG mobility gradually decreases and approaches the phonon-limited bulk value for vanishing quantum confinement. The insertion of a thin AlN barrier interlayer improves transport properties of the 2DEG and the mobility substantially increases due to a suppression of the alloy scattering. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3174441]

引用

页数：5

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