Electronic transport through in situ grown ultrathin BaTiO3 films

被引：7

作者：

Shin, Junsoo ^{[1
]}

Kalinin, S. V. ^{[2
]}

Plummer, E. W. ^{[3
]}

Baddorf, A. P. ^{[2
]}

机构：

[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[2] Oak Ridge Natl Lab, Div Mat Sci, Ctr Nanophase, Oak Ridge, TN 37831 USA

[3] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

barium compounds; dielectric hysteresis; dielectric polarisation; ferroelectric switching; ferroelectric thin films; pulsed laser deposition; scanning tunnelling microscopy; scanning tunnelling spectroscopy; stochastic processes; TUNNEL-JUNCTIONS;

D O I：

10.1063/1.3186067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarization-mediated transport properties of ultrathin (4 and 10 unit cells) fully strained polar BaTiO3 films are studied by scanning tunneling microscopy and spectroscopy. High quality BaTiO3 films are grown on SrRuO3/SrTiO3 by pulsed laser deposition and characterized in situ in ultrahigh vacuum. Previous structural measurements have shown that these films are polarized. Current-voltage curves exhibit features at similar to +/- 2.5 V, which show hysteresis consistent with bias-induced polarization switching. The intensity and voltage of the features indicate a stochastic process. These features are not observed on nonpolarized SrTiO3 films grown and characterized similarly.

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页数：3

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