Medium energy Art-ion induced ripple formation: Role of ion energy in pattern formation

被引:8
|
作者
Garg, S. K. [1 ]
Datta, D. P. [1 ]
Ghatak, J. [2 ]
Tripathy, S. R. [3 ]
Kanjilal, D. [4 ]
Som, T. [1 ]
机构
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India
[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[4] Interuniv Accelerator Ctr, New Delhi 110067, India
关键词
Ion irradiation; Micro Raman; SRIM simulation; Nuclear energy loss; Ion-induced ripple pattern; TOPOGRAPHY;
D O I
10.1016/j.apsusc.2014.08.128
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We show that the energy scaling of the ion beam induced depth of amorphization and ripple wavelength in the medium energy regime can be understood in terms of dominant nuclear energy loss in this energy regime. Specifically, thickness of amorphous layer developed under 60 keV Ar+-ion bombardment of Si at an incidence angle of 60 as determined by micro-Raman Spectrometry and cross-sectional transmission electron microscopy is shown to be consistent with the assumption of only nuclear energy loss mediated evolution. Further, the variation of ripple wavelength with ion energy is estimated using SRIM. Estimated variation of ripple wavelength with ion energy under this assumption is found to be in qualitative agreement with experimental observations in the medium energy range. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:476 / 479
页数:4
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