Impact of Sr content on dielectric and electrical properties of pulsed laser ablated SrBi2Ta2O9 thin films

被引:8
作者
Bhattacharyya, S [1 ]
Laha, A [1 ]
Krupanidhi, SB [1 ]
机构
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
关键词
D O I
10.1063/1.1486031
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ferroelectric properties of SrBi2Ta2O9 thin films grown by laser ablation were investigated as a function of the Sr+2 content in the films. Different target compositions were used to obtain films with different Sr+2/Ta+5 ratios. The initial composition was according to the stoichiometric composition (1/2), and the Sr+2/Ta+5 ratio was varied to 0.7/2.0. It was seen that the remanent polarization showed a consistent increase, as the film became more deficient of "Sr+2" up to a certain extent. Similarly, a decrease in the dielectric constant and the leakage current with the decrease of Sr+2 in the film was observed. The dielectric transition temperature showed an increase with the reduction of Sr+2 content and was seen to approach the bulk value. (C) 2002 American Institute of Physics.
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页码:1056 / 1061
页数:6
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