Characteristics of doping controllable ZnO films grown by photo-assisted metal organic chemical vapor deposition

被引：8

作者：

Feng, Tian-Hong ^{[1
]}

Xia, Xiao-Chuan ^{[2
]}

机构：

[1] Dongbei Univ Finance & Econ, Sch Math, Dalian, Liaoning, Peoples R China

[2] Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian, Liaoning, Peoples R China

来源：

OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 04期

基金：

中国国家自然科学基金;

关键词：

LIGHT-EMITTING-DIODES; THIN-FILMS; N-TYPE; PHOTOLUMINESCENCE; NANOWIRES; DEVICES; MOCVD;

D O I：

10.1364/OME.7.001281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Arsenic doped p-type ZnO films are prepared by the photo-assisted metal organic chemical vapor deposition method. Using the photo-assisted technique, the acceptor activation process is simplified. The arsenic doping level, which decides the carrier distribution, could be controlled by changing the thickness of the pre-deposited GaAs layer. The crystal and optical quality of the ZnO films is good. The acceptor is As-Zn-2V(Zn). Its ionization energy could be slightly reduced by increasing the arsenic doping level. This finding is very helpful to improve the hole concentration. Our experiments provide a new method to grow high performance p-type ZnO based photoelectric devices. (C) 2017 Optical Society of America

引用

页码：1281 / 1288

页数：8

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