A Logic Circuit Design for Perfecting Memristor-Based Material Implication

被引：53
作者：
Chen, Qiao [1 ,2 ]
Wang, Xiaoping [1 ,2 ]
Wan, Haibo [1 ,2 ]
Yang, Ran [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Automat, Educ Minist China, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol, Key Lab Image Proc & Intelligent Control, Educ Minist China, Wuhan 430074, Hubei, Peoples R China
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2017年 / 36卷 / 02期
基金：
国家教育部博士点专项基金资助; 中国国家自然科学基金;
关键词：
Material implication; memristor; nanocrossbar memory; stateful logic; Von Neumann architecture;
D O I：
10.1109/TCAD.2016.2578881
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Memristor-based material implication (M-IMP) logic is popular with logic operations, which provides a possibility that memory is operated directly. However, there is a small limitation that memristor is not able to reach the lowest resistance in M-IMP. In this brief, the M-IMP limitation and its influence are analyzed briefly. In addition, a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar is proposed, which can perfect the M-IMP limitation and eliminate the influence. Moreover, we simulate the proposed circuit design and the simulation results verify the correctness of the analysis.
引用
收藏
页码：279 / 284
页数：6
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