A pulse shape discrimination gamma-ray detector based on a silicon drift chamber coupled to a CsI(T1) scintillator: Prospects for a 1 keV-1 MeV monolithic detector

被引：22
作者：
Marisaldi, M [1 ]
Labanti, C
Soltau, H
机构：
[1] CNR, IASF Sez Bologna, I-40129 Bologna, Italy
[2] PNSensor GmbH, D-80803 Munich, Germany
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期
关键词：
gamma-ray detectors; pulse shape discrimination; silicon drift detectors; X-ray detectors;
D O I：
10.1109/TNS.2004.832679
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an X- and gamma-ray detector based on a silicon drift detector (SDD) coupled to a CsI(TI) scintillating crystal is presented. The SDD is operated both as a direct X-ray detector for photons interacting in silicon and as an indirect detector for photons interacting in the scintillator. As interactions in silicon and in CsI yield different amounts of charge per unit energy deposited, discrimination of the place of interaction is necessary to obtain the correct energy. Discrimination of the interaction type is carried out by means of pulse shape discrimination performed with two parallel processing chains with different shaping times. The performance of the detectors are described and discussed. Pulse shape discrimination is possible throughout the detector energy range.
引用
收藏
页码：1916 / 1922
页数：7
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