Interfacial electronic structure-modulated magnetic anisotropy in Ta/CoFeB/MgO/Ta multilayers

被引:29
|
作者
Chen, Xi [1 ]
Wang, Kai You [2 ]
Wu, Zheng Long [3 ]
Jiang, Shao Long [1 ]
Yang, Guang [1 ]
Liu, Yang [1 ]
Teng, Jiao [1 ]
Yu, Guang Hua [1 ]
机构
[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China
[3] Beijing Normal Univ, Analyt & Testing Ctr, Beijing 100875, Peoples R China
关键词
TUNNEL-JUNCTIONS; PERPENDICULAR-ANISOTROPY; TORQUES; MGO;
D O I
10.1063/1.4894765
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed several unexpected phenomena when a trace amount of Fe atoms is deposited onto the CoFeB/MgO interface in Ta/CoFeB/MgO/Ta multilayers. With the nominal thickness of the introduced Fe atoms (t(Fe)) varying from 0 to 0.1 angstrom, the effective magnetic anisotropy energy (K-eff) of annealed multilayers is remarkably enhanced from 1.28 x 10(6) erg/cm(3) to 2.14 x10(6) erg/cm(3). As t(Fe) further increasing, the K-eff decreases and even becomes negative when t(Fe)>1 angstrom, indicating the change from perpendicular magnetic anisotropy to in-plane magnetic anisotropy. The analysis by X-ray photoelectron spectrometer reveals that the Fe atoms at annealed CoFeB/MgO interface show different electronic structures as t(Fe) increasing, which combine with O atoms to form FeOx (x<1), Fe2O3, and Fe3O4, respectively, leading to modulation of Fe 3d-O 2p orbital hybridization and thus the K-eff. On the other hand, we find that the introduction of Fe atoms also helps to reduce the multilayers' magnetic damping. (C) 2014 AIP Publishing LLC.
引用
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页数:5
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