Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

被引：19
作者：
Gu, Tingkun [1 ]
机构：
[1] Shandong Univ, Sch Elect Engn, Jinan 250061, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 20期
基金：
中国国家自然科学基金;
关键词：
TOTAL-ENERGY CALCULATIONS; RESISTANCE-CHANGE MEMORY; WAVE BASIS-SET; ZINC-OXIDE; SRTIO3; NONSTOICHIOMETRY;
D O I：
10.1063/1.4879677
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic structure of ZnO with defects of oxygen vacancies were investigated by using first-principles methods. Some structure models were constructed in order to investigate the effects of the distribution of oxygen vacancies on the electronic properties of ZnO. By analyzing the calculated results, we found that only the aligned oxygen vacancies can form the conducting channel in ZnO, and the transformation of the oxygen vacancy from charged state to neutral state is consistent with the energetics rule of the forming aligned oxygen vacancies. As for the heterojunction of Pt/ZnO/Pt, the oxygen vacancies near the interface of Pt/ZnO depress the local Schottky barrier effectively, and the aligned oxygen vacancies in ZnO form a conducting filament connecting two Pt electrodes. The metallic filament formation in Pt/ZnO/Pt resistive switching cells should be closely related to the carrier injection from Pt electrode into ZnO and the arrangement of oxygen vacancies in ZnO slab. (C) 2014 AIP Publishing LLC.
引用
收藏
页数：8
相关论文
共 62 条
[21]   A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors [J].
Jiang, An Quan ;
Wang, Can ;
Jin, Kui Juan ;
Liu, Xiao Bing ;
Scott, James F. ;
Hwang, Cheol Seong ;
Tang, Ting Ao ;
Bin Lu, Hui ;
Yang, Guo Zhen .
ADVANCED MATERIALS, 2011, 23 (10) :1277-+
[22]   Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching [J].
Kamiya, Katsumasa ;
Yang, Moon Young ;
Magyari-Koepe, Blanka ;
Niwa, Masaaki ;
Nishi, Yoshio ;
Shiraishi, Kenji .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3400-3406
[23]   Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories [J].
Kamiya, Katsumasa ;
Yang, Moon Young ;
Nagata, Takahiro ;
Park, Seong-Geon ;
Magyari-Koepe, Blanka ;
Chikyow, Toyohiro ;
Yamada, Keisaku ;
Niwa, Masaaki ;
Nishi, Yoshio ;
Shiraishi, Kenji .
PHYSICAL REVIEW B, 2013, 87 (15)
[24]   ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels [J].
Kamiya, Katsumasa ;
Yang, Moon Young ;
Park, Seong-Geon ;
Magyari-Koepe, Blanka ;
Nishi, Yoshio ;
Niwa, Masaaki ;
Shiraishi, Kenji .
APPLIED PHYSICS LETTERS, 2012, 100 (07)
[25]   Physical electro-thermal model of resistive switching in bi-layered resistance-change memory [J].
Kim, Sungho ;
Kim, Sae-Jin ;
Kim, Kyung Min ;
Lee, Seung Ryul ;
Chang, Man ;
Cho, Eunju ;
Kim, Young-Bae ;
Kim, Chang Jung ;
Chung, U. -In ;
Yoo, In-Kyeong .
SCIENTIFIC REPORTS, 2013, 3
[26]   A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte [J].
Kozicki, Michael N. ;
Gopalan, Chakravarthy ;
Balakrishnan, Muralikrishnan ;
Mitkova, Maria .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) :535-544
[27]   Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186
[28]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775
[29]   Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].
Kresse, G ;
Furthmuller, J .
COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50
[30]  
Kwon DH, 2010, NAT NANOTECHNOL, V5, P148, DOI [10.1038/NNANO.2009.456, 10.1038/nnano.2009.456]
1234567