Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

被引：19

作者：

Gu, Tingkun ^{[1
]}

机构：

[1] Shandong Univ, Sch Elect Engn, Jinan 250061, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 20期

基金：

中国国家自然科学基金;

关键词：

TOTAL-ENERGY CALCULATIONS; RESISTANCE-CHANGE MEMORY; WAVE BASIS-SET; ZINC-OXIDE; SRTIO3; NONSTOICHIOMETRY;

D O I：

10.1063/1.4879677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of ZnO with defects of oxygen vacancies were investigated by using first-principles methods. Some structure models were constructed in order to investigate the effects of the distribution of oxygen vacancies on the electronic properties of ZnO. By analyzing the calculated results, we found that only the aligned oxygen vacancies can form the conducting channel in ZnO, and the transformation of the oxygen vacancy from charged state to neutral state is consistent with the energetics rule of the forming aligned oxygen vacancies. As for the heterojunction of Pt/ZnO/Pt, the oxygen vacancies near the interface of Pt/ZnO depress the local Schottky barrier effectively, and the aligned oxygen vacancies in ZnO form a conducting filament connecting two Pt electrodes. The metallic filament formation in Pt/ZnO/Pt resistive switching cells should be closely related to the carrier injection from Pt electrode into ZnO and the arrangement of oxygen vacancies in ZnO slab. (C) 2014 AIP Publishing LLC.

引用

页数：8

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