Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias

被引：7

作者：

Hao Yue ^{[1
]}

Han Xin-Wei

Zhang Jin-Cheng

Zhang Jin-Feng

机构：

[1] Xidian Univ, Microelect Inst, Xian 710071, Peoples R China

[2] Xidian Univ, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2006年 / 55卷 / 07期

关键词：

AlGaN/GaN HEMT; DC sweep; current slump; model;

D O I：

10.7498/aps.55.3622

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

As the most remarkable effect in GaN microwave power device, Current slump, has been studied widely. However, there still exist unsolved proplems. Based on the analysis of experiment and theory on the AlGaN/GaN high electron mobility transistor (HEMT) under de sweep, an analytical model for the current collapse is developed considering the effects of polarization and surface states. The comparison between simulations and physical measurements shows a good agreement.

引用

页码：3622 / 3628

页数：7

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