Crystal orientation dependency of ferroelectric property in rhombohedral Pb(Zr,Ti)O3 films

被引：4
作者：
Ehara, Yoshitaka [1 ]
Utsugi, Satoru [1 ]
Oikawa, Takahiro [1 ]
Yamada, Tomoaki [2 ,3 ]
Funakubo, Hiroshi [1 ]
机构：
[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan
[2] Nagoya Univ, Dept Mat Phys & Energy Engn, Nagoya, Aichi 4648603, Japan
[3] Japan Sci & Technol Agcy, PRESTO, Chiyoda Ku, Tokyo 1020075, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期
基金：
日本学术振兴会;
关键词：
SOLID-SOLUTION SYSTEM; PIEZOELECTRIC PROPERTIES; THERMODYNAMIC THEORY; FATIGUE-ENDURANCE; PZT CAPACITORS; THIN-FILMS; (PB; LA)(ZR; CONDUCTION; RETENTION;
D O I：
10.7567/JJAP.53.04ED06
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferroelectric properties were investigated for (100), (110), and (111)-single-oriented rhombohedral Pb(Zr0.65Ti0.35)O-3 films. Saturation polarization, P-sat, was changed by the simple tilting angle of the polar axis from the film surface normal. On the other hand, (100)- and (11 (1) over bar)/(111)-oriented films prepared on (100) Si substrates showed similar P-sat values due to the coexistence of (11 (1) over bar) orientation. The coercive field, E-c, of rhombohedral Pb(Zr0.65Ti0.35)O-3 films was lower than that of tetragonal Pb(Zr0.4Ti0.6)O-3 films. (100)-oriented rhombohedral films with SrRuO3 electrodes did not show noticeable degradation in polarization up to 10(10) switching cycles. These results show that (100)-oriented rhombohedral Pb(ZrxTi1-x)O-3 film is available to realize the low voltage operated ferroelectric random access memory instead of the present tetragonal Pb(ZrxTi1-x)O-3 films. (C) 2014 The Japan Society of Applied Physics
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页数：6
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