Type-II InAsxSb1-x/InAs quantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

被引：12

作者：

Yeap, G. H. ^{[1
]}

Rybchenko, S. I. ^{[1
]}

Itskevich, I. E. ^{[1
]}

Haywood, S. K. ^{[1
]}

机构：

[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 07期

关键词：

electronic structure; III-V semiconductors; indium compounds; infrared spectra; self-assembly; semiconductor quantum dots; FINITE-ELEMENT-ANALYSIS; SEMICONDUCTOR STRUCTURES; STRAIN DISTRIBUTION; BAND-EDGES; INAS/GAAS; NANOSTRUCTURES; ALLOYS; 8-BAND;

D O I：

10.1103/PhysRevB.79.075305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InSb-based self-assembled quantum dots are very promising for the midinfrared (3-5 mu m) optical range. We have analyzed the effect of geometry and composition on the electronic structure and optical spectra of InAsxSb1-x/InAs dots. The calculated transition energies agree well with the available experimental data. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.

引用

页数：6

共 7 条

[1] Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications
Yeap G.H.
Rybchenko S.
Itskevich I.
Haywood S.
Carrington P.
Krier A.
Defect and Diffusion Forum, 2023, 425 : 3 - 8
[2] Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots
Liao, Yu-An
Hsu, Wei-Ting
Chiu, Pei-Chin
Chyi, Jen-Inn
Chang, Wen-Hao
APPLIED PHYSICS LETTERS, 2009, 94 (05)
[3] Nucleation Chronology and Electronic Properties of InAs1-x-ySbxPy Graded Composition Quantum Dots Grown on an InAs(100) Substrate
Gambaryan, Karen M.
Boeck, Torsten
Trampert, Achim
Marquardt, Oliver
ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (03) : 646 - 650
[4] Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications
Motyka, M.
Sek, G.
Ryczko, K.
Misiewicz, J.
Lehnhardt, T.
Hoefling, S.
Forchel, A.
APPLIED PHYSICS LETTERS, 2009, 94 (25)
[5] Effect of AlGaAs composition on the type-I to type-II transition in AlInAs/AlGaAs self-assembled quantum dots
Neffati, R.
Saidi, I.
Ben Radhia, S.
Boujdaria, K.
Testelin, C.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (08)
[6] Effect of microscopic interface asymmetry on optical properties of short-period InAs/GaSb type-II superlattices
Dong, H. M.
Li, L. L.
Xu, W.
Han, K.
THIN SOLID FILMS, 2015, 589 : 388 - 395
[7] Composition-Defined Optical Properties and the Direct-to-Indirect Transition in Core-Shell In1-x Ga x P/ZnS Colloidal Quantum Dots
Gupta, Aritrajit
Ondry, Justin C.
Lin, Kailai
Chen, Yunhua
Hudson, Margaret H.
Chen, Min
Schaller, Richard D.
Rossini, Aaron J.
Rabani, Eran
Talapin, Dmitri V.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2023, 145 (30) : 16429 - 16448

← 1 →