Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module

被引：84

作者：

Wei Kexin ^{[1
,2
]}

Du Mingxing ^{[2
,3
]}

Xie Linlin ^{[3
]}

Li Jian ^{[3
]}

机构：

[1] Tianjin Univ Technol, Tianjin Key Lab Control Theory & Applicat Complic, Tianjin 300384, Peoples R China

[2] Tianjin Univ, Sch Elect Engn & Automat, Tianjin 300072, Peoples R China

[3] Tianjin Univ Technol, Sch Elect Engn, Tianjin 300384, Peoples R China

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2014年 / 14卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Fault indicator; insulated gate bipolar transistors (IGBTs); semiconductor device reliability; wire bond liftoff; POWER; CONVERTERS; MODELS; DIODE;

D O I：

10.1109/TDMR.2012.2200485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The relationship between bonding wire liftoff and terminal voltage in insulated gate bipolar transistor (IGBT) power module is studied. Bonding wire liftoff failure is one of the most dominant limiting factors to the reliability behavior of IGBT power module. In this paper, in order to monitor this type of fault, the effects of the typical degradations are considered. The parasitic inductance and gate equivalent capacitance of IGBT module change due to bonding wire liftoff, which have different impacts on the external characteristics. So, two aspects of IGBT module terminal characteristics are investigated to identify any measurable signature used for monitoring bond wire liftoff failures: 1) gate-emitter voltage during turn-on process and 2) collector-emitter voltage during turn-off process. This paper aims to provide useful information for further development in monitoring the health of IGBT module.

引用

页码：83 / 89

页数：7

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