The structure of sapphire implanted with nitrogen at room temperature and 1000°C

被引：6
作者：
McHargue, C [1 ]
Ononye, LC
Allard, LF
Alves, E
da Silva, MF
Soares, JC
机构：
[1] Univ Tennessee, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
[3] ITN, P-2686953 Sacavem, Portugal
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 191卷
关键词：
sapphire; TEM; RBS-C; optical absorption;
D O I：
10.1016/S0168-583X(02)00623-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The structure of N-implanted sapphire (single crystal alpha-Al2O3) has been studied using Rutherford backscattering-ion channeling spectroscopy (RBS-C), transmission electron microscopy (TEM) and optical absorption. Specimens having the c-axis normal to the optically polished surface were implanted with 3 x 10(16) N/cm(2) (150 keV) at room temperature and 1000 degreesC. Little residual disorder was observed in the RBS-C spectra for the RT samples. A band of bubbles or voids (diameters 1-10 nm) extending from about 75 to 300 nm below the surface was observed in cross-sectioned TEM specimens. The disorder was greater in the 1000 degreesC sample and the TEM examination indicated the presence of extended defects lying parallel to the c-planes. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：629 / 632
页数：4
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