Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing

被引：8

作者：

Ishiyama, T

Nagase, M

Omura, Y

机构：

[1] NTT Corp, Adv Technol Corp, Shinjuku Ku, Tokyo 1630430, Japan

[2] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[3] Kansai Univ, High Technol Res Ctr, Suita, Osaka 5640073, Japan

来源：

APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期

关键词：

scaling analysis; SIMOX; interface; annealing; step-terrace; AFM;

D O I：

10.1016/S0169-4332(01)00834-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The step-terrace structures at the interface between the Si layer and the buried SiO2 layer of a Separation by IMplanted OXygen substrate has been observed by using atomic force microscopy (AFM) after removing the SiO2, and Si layers. The time evolution of the Si-SiO2 interface roughness during high-temperature annealing was analyzed by the scaling analysis of AFM data. The correlation length exhibited a nice correspondence to the size of square domain structures. Decreasing in the index of the length scale indicates that the growth mechanism changes as the annealing proceeds. (C) 2002 Published by Elsevier Science B.V.

引用

页码：16 / 19

页数：4

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