Intense laser field effect on D2+ molecular complex localized in semiconductor quantum wells

被引:17
作者
Suaza, Y. A. [1 ,2 ]
Fulla, M. R. [1 ,3 ]
Laroze, D. [4 ]
Baghramyan, H. M. [5 ]
Marin, J. H. [1 ]
机构
[1] Univ Nacl Colombia, Escuela Fis, Grp Cercim & Vitreos, AA 3840, Medellin, Colombia
[2] Univ Catolic Luis Amigo, Dept Ciencias Basicas, Transversal 51A 67B-90, Medellin, Colombia
[3] Inst Univ Pascual Bravo, Ctr Invest Ciencias Electron & Informcit CIENTIC, AA 6564, Medellin, Colombia
[4] Univ Tarapaca, CEDENNA, Inst Alta Invest, Casilla 7D, Arica, Chile
[5] IIT, Ctr Biomol Nanotechnol UNILE, Via Barsanti, I-73010 Arnesano, Italy
关键词
Coupled donors; H-2(+)-like impurities; Quantum well; Laser field radiation; Binding energy; Finite element method; DONOR IMPURITIES; HYDROGENIC IMPURITIES; MAGNETIC-FIELD; TRANSITIONS; ENERGY; IONIZATION; STATES;
D O I
10.1016/j.cplett.2019.06.024
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
D-2(+) molecular ion in a semiconductor quantum well under laser-field radiation by using finite elements method within the effective mass approximation is theoretically studied. The effects of the laser radiation, donor-donor separation, and quantum well width on the D-2(+) total energy and the D-2(+) binding energy corresponding to the second ionization process D-2(+) -> D+ + D+ + e(-) are analyzed. We show that the laser-field radiation modifies significantly the equilibrium length and the dissociation energy of a D-2(+)-complex in a quantum well. Our results in the limit cases are in good agreement with those previously reported for a single donor impurity D-0.
引用
收藏
页码:384 / 390
页数:7
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