Optical properties of nanocrystalline Ga1-xInxSb/SiO2 films

被引：3

作者：

Liu, FM ^{[1
]}

Wang, TM

Zhang, LD

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2002年 / 37卷 / 05期

基金：

中国国家自然科学基金;

关键词：

nanostructures; XRD; XPS; Raman spectroscopy; optical properties;

D O I：

10.1016/S0025-5408(02)00720-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ga1-xInxSb (x = 0.19, 0.38, 0.63) nanoparticles embedded in a SiO2 matrix were grown on the glass substrates by radio-frequency magnetron co-sputtering. X-ray diffraction patterns strongly support the existence of nanocrystalline Gal(1-x)In(x)Sb in the SiO2 matrix. The changes in binding energies with Ga1-xInxSb nanocrystals deposition have been directly observed by X-ray photoemission spectroscopy, and these show the existence of Ga1-xInxSb nanocrystals in the SiO2 matrix. Room-temperature Raman spectra show that the Raman peaks of the Ga1-xInxSb-SiO2 composite film have a larger red-shift of about 95.3 cm(-1) (longitudinal-optical mode) and 120.1 cm(-1) (transverse-optical mode) than that of bulk GaSb, suggesting the existence of phonon confinement and tensile stress effects. Additionally, the room temperature optical transmission data exhibit a large blue-shift with respect to that of the bulk semiconductor due to the strong quantum confinement effect. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：891 / 900

页数：10

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