Highly conducting and wide-band transparent F-doped Zn1-xMgxO thin films for optoelectronic applications

被引：23
|
作者：
Guo, Y. M. [1 ]
Zhu, L. P. [1 ,2 ]
Jiang, J. [1 ]
Li, Y. G. [1 ]
Hu, L. [1 ]
Xu, H. B. [1 ]
Ye, Z. Z. [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 602卷
基金：
中国国家自然科学基金;
关键词：
F-doped; Wide-band; Transparent conducting oxide; F concentration; Pulsed laser deposition; Zn1-xMgxO thin films; OPTICAL-PROPERTIES; DEPOSITION TEMPERATURE; GROWTH TEMPERATURE; AL; MG; OFFSET;
D O I：
10.1016/j.jallcom.2014.02.181
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Fluorine (F) doped Zn-1 xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn-1 xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350 degrees C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92 x 10 (4)Omega cm, with a carrier concentration of 5.26 x 10(20) cm (3), and a Hall mobility of 17.2 cm(2) V (1) s (1). The average optical transmittance is higher than 85% in the visible wavelength region. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：294 / 299
页数：6
相关论文
共 50 条
  • [1] RAMAN AND OPTOELECTRONIC PROPERTIES OF Zn1-xMgxO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
    Huang, Q. L.
    Fang, L.
    Ruan, H. B.
    Guo, B. D.
    Wu, F.
    Kong, C. Y.
    SURFACE REVIEW AND LETTERS, 2011, 18 (05) : 189 - 195
  • [2] Characterization of Zn1-xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering
    Maejima, K.
    Shibata, H.
    Tampo, H.
    Matsubara, K.
    Niki, S.
    THIN SOLID FILMS, 2010, 518 (11) : 2949 - 2952
  • [3] Zn1-xMgxO thin films deposited by spray pyrolysis
    Sahal, M.
    Mari, B.
    Mollar, M.
    Manjon, F. J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 9, 2010, 7 (09):
  • [4] ZTO transparent conducting thin films for optoelectronic applications
    Raj, Rishabh
    Gupta, Himanshu
    Purohit, L. P.
    BULLETIN OF MATERIALS SCIENCE, 2021, 44 (02)
  • [5] Preparation and thermal stability of F-doped ZnO transparent conducting thin films
    Cao, L.
    Zhu, L. P.
    Chen, W. F.
    Ye, Z. Z.
    OPTICAL MATERIALS, 2013, 35 (06) : 1293 - 1296
  • [6] Influence of sputtering pressure on band gap of Zn1-xMgxO thin films prepared by radio frequency magnetron sputtering
    Wang, Dapeng
    Narusawa, Tadashi
    Kawaharamura, Toshiyuki
    Furuta, Mamoru
    Li, Chaoyang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (05):
  • [7] Highly transparent conducting CdO thin films by radiofrequency magnetron sputtering for optoelectronic applications
    Cheemadan, Saheer
    Rafiudeen, Amiruddin
    Kumar, Maniyeri Chandroth Santhosh
    JOURNAL OF NANOPHOTONICS, 2016, 10 (03)
  • [8] Influence of fabrication technique on structure and photoluminescence of Zn1-xMgxO thin films
    Wang Wei-Na
    Fang Qing-Qing
    Zhou Jun
    Wang Sheng-Nan
    Yan Fang-Liang
    Liu Yan-Mei
    Li Yan
    Lue Qing-Rong
    ACTA PHYSICA SINICA, 2009, 58 (05) : 3461 - 3467
  • [9] Transparent conducting F-doped SnO2 thin films grown by pulsed laser deposition
    Kim, H.
    Auyeung, R. C. Y.
    Pique, A.
    THIN SOLID FILMS, 2008, 516 (15) : 5052 - 5056
  • [10] Low temperature processed highly conducting, transparent, and wide bandgap Gd doped CdO thin films for transparent electronics
    Gupta, R. K.
    Ghosh, K.
    Patel, R.
    Kahol, P. K.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (10) : 4146 - 4149
12345