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Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells
被引:1
|作者:
Wan, SP
[1
]
Xia, JB
[1
]
机构:
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
基金:
中国国家自然科学基金;
关键词:
quantum wells;
semiconductors;
piezoelectricity;
optical properties;
D O I:
10.1016/S0038-1098(02)00037-6
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Excitonic states in Al(x)Ga(1-x)N/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.
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页码:287 / 292
页数:6
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