Epitaxial growth of rutile films on Si (100) substrates by thermal oxidation of evaporated titanium films in argon flux

Thick (2000-3000 Angstrom) titanium oxide films were synthesized on Si (100) substrates and characterized using x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS). Epitaxial rutile-type TiO2 (100) films were prepared by an electron beam evaporating a titanium film (1000 Angstrom) in vacuum at 400 degrees C, followed by oxidation in argon Bur at the flow rate of 30 seem to temperatures of 500-700 degrees C. RBS analyses show that stoichiometric TiO2 films were formed by the oxidation of titanium films and 2 theta-theta scan and pole figure of XRD confirm that the rutile-type TiO2 films have the orientation relationship with the substrates (100)TiO2 parallel to (100)Si and (110)TiO2 parallel to (110)Si.