Ge doped Cu2ZnSnS4: An investigation on absorber recrystallization and opto-electronic properties of solar cell

被引：26

作者：

Sanchez, T. G. ^{[1
]}

Regalado-Perez, E. ^{[1
]}

Mathew, X. ^{[1
]}

Sanchez, M. F. ^{[1
]}

Sanchez, Y. ^{[2
]}

Saucedo, E. ^{[2
]}

Mathews, N. R. ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico

[2] Catalonia Inst Energy Res IREC, Jardins Dones Negre 1, Barcelona 08930, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2019年 / 198卷

关键词：

Cu2ZnSnS4; Cu2ZnSnGeS4; Solar cell; EFFICIENCY; CONVERSION; FILMS;

D O I：

10.1016/j.solmat.2019.04.011

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we report studies on the incorporation of Ge into Cu2ZnSnS4 (CZTS) films and a systematic investigation on the formation and properties of CZTS:Ge by a sequential process based on the sputtering of Cu/Sn/Cu/Zn metallic stacks followed by a reactive annealing under S atmosphere. Solar cells with the glass/Mo/CZTGS/CdS/i-ZnO/ITO architecture were fabricated and the role of the Ge-layer position as well as the thickness on the devices parameters was studied. For this purpose, different layer arrangements of the stacks were investigated, including: Mo/Ge/Cu/Sn/Cu/Zn, Mo/Cu/Sn/Cu/Zn/Ge and Mo/Ge/Cu/Sn/Cu/Zn/Ge. Devices made with the stack Mo/Cu/Sn/Cu/Zn/Ge resulted in best performance and were selected for further studies by varying the Ge layer thickness, concluding that with 5 nm thick Ge layer a 27% efficiency improvement over the reference cell was obtained (from 5.5% up to 7%). The EQE curve showed an improvement in the collection of photo generated carriers. The carrier concentration was determined to be in the range of 1 x 10(16) - 1 x 10(17) cm(-3) for CZTGS films, which is in the range of the values reported for CZTS.

引用

页码：44 / 52

页数：9

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