Hexagonal diamond formation on steel substrates by negative bias microwave plasma enhanced chemical vapor deposition

被引:11
作者
Amornkitbamrung, V. [1 ]
Burinprakhone, I. [1 ]
Jarernboon, W. [1 ]
机构
[1] Khon Kaen Univ, Fac Sci, Dept Phys, Integrated Nanotechnol Res Ctr, Khon Kaen 40002, Thailand
关键词
Hexagonal diamond; Plasma CVD; Raman; XRD; SOLID INTERFACIAL REACTION; NANOCRYSTALS; NUCLEATION; FILMS;
D O I
10.1016/j.surfcoat.2008.12.020
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper reports for the first time the synthesis of hexagonal diamond thin films on high-speed steel substrates by multi-mode microwave plasma enhanced chemical vapor deposition. Before deposition of the films, the substrate surface was treated by scratching with diamond powder. The deposited films were characterized by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy. The XRD patterns of (100) and (101) planes and the Raman peaks at similar to 1317-1322 cm(-1) were observed, confirming the formation of hexagonal diamond phase in the prepared films. The effects of voltage bias on the phase formation, microstructure and hardness of the films were also studied by setting the voltage to 0, -70, -150 and -190 V. The highest hardness of 23.8 GPa was found in the film having clusters of size about 550 nm deposited under a bias voltage of - 150 V. These clusters were built up of grains of size about 14 nm. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1645 / 1648
页数:4
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