Indium oxide nanostructures

被引：59
作者：
Cheng, G.
Stern, E.
Guthrie, S.
Reed, M. A.
Klie, R.
Hao, Y. F.
Meng, G.
Zhang, L.
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[2] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[3] Yale Univ, Dept Biomed Engn, New Haven, CT 06520 USA
[4] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[5] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[6] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 85卷 / 03期
关键词：
D O I：
10.1007/s00339-006-3706-x
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this report we review the growth of indium oxide (In2O3) nanostructures, including octahedral nanocrystals (NCs), nanobelts (NBs), nanosheets (NSs), and nanowires (NWs), by hot-wall chemical vapor deposition (HW-CVD). This system is highly controllable, allowing the user to easily access different growth regimes - each corresponding to the growth of a different nanostructure - by changing growth variables of the HW-CVD system. Hot-wall CVD produces crystalline nanostructures; here we present a survey of microstructural characterizations of the four types of In2O3 nanostructures using transmission- and scanning-electron microscopy. Interestingly, the In2O3 nanostructures have different preferred growth directions: NCs have (111) faces, NBs are predominantly (200), and NWs are predominantly (110). We end the review by discussing the current shortcomings of HW-CVD growth of In2O3 nanostructures.
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页码：233 / 240
页数：8
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