Indium oxide nanostructures

被引:58
作者
Cheng, G.
Stern, E.
Guthrie, S.
Reed, M. A.
Klie, R.
Hao, Y. F.
Meng, G.
Zhang, L.
机构
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
[2] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[3] Yale Univ, Dept Biomed Engn, New Haven, CT 06520 USA
[4] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[5] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[6] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 85卷 / 03期
关键词
D O I
10.1007/s00339-006-3706-x
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this report we review the growth of indium oxide (In2O3) nanostructures, including octahedral nanocrystals (NCs), nanobelts (NBs), nanosheets (NSs), and nanowires (NWs), by hot-wall chemical vapor deposition (HW-CVD). This system is highly controllable, allowing the user to easily access different growth regimes - each corresponding to the growth of a different nanostructure - by changing growth variables of the HW-CVD system. Hot-wall CVD produces crystalline nanostructures; here we present a survey of microstructural characterizations of the four types of In2O3 nanostructures using transmission- and scanning-electron microscopy. Interestingly, the In2O3 nanostructures have different preferred growth directions: NCs have (111) faces, NBs are predominantly (200), and NWs are predominantly (110). We end the review by discussing the current shortcomings of HW-CVD growth of In2O3 nanostructures.
引用
收藏
页码:233 / 240
页数:8
相关论文
共 50 条
  • [21] In2O3 nanowires as chemical sensors
    Li, C
    Zhang, DH
    Liu, XL
    Han, S
    Tang, T
    Han, J
    Zhou, CW
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (10) : 1613 - 1615
  • [22] Diameter-controlled growth of single-crystalline In2O3 nanowires and their electronic properties
    Li, C
    Zhang, DH
    Han, S
    Liu, XL
    Tang, T
    Zhou, CW
    [J]. ADVANCED MATERIALS, 2003, 15 (02) : 143 - +
  • [23] Low temperature synthesized Sn doped indium oxide nanowires
    Li, SY
    Lee, CY
    Lin, P
    Tseng, TY
    [J]. NANOTECHNOLOGY, 2005, 16 (04) : 451 - 457
  • [24] One-dimensional transport of In2O3 nanowires -: art. no. 213101
    Liu, F
    Bao, M
    Wang, KL
    Li, C
    Lei, B
    Zhou, C
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
  • [25] Laser ablation synthesis and electron transport studies of tin oxide nanowires
    Liu, ZQ
    Zhang, DH
    Han, S
    Li, C
    Tang, T
    Jin, W
    Liu, XL
    Lei, B
    Zhou, CW
    [J]. ADVANCED MATERIALS, 2003, 15 (20) : 1754 - +
  • [26] A laser ablation method for the synthesis of crystalline semiconductor nanowires
    Morales, AM
    Lieber, CM
    [J]. SCIENCE, 1998, 279 (5348) : 208 - 211
  • [27] Direct integration of metal oxide nanowire in vertical field-effect transistor
    Nguyen, P
    Ng, HT
    Yamada, T
    Smith, MK
    Li, J
    Han, J
    Meyyappan, M
    [J]. NANO LETTERS, 2004, 4 (04) : 651 - 657
  • [28] Large-scale synthesis of In2O3 nanowires
    Peng, XS
    Wang, YW
    Zhang, J
    Wang, XF
    Zhao, LX
    Meng, GW
    Zhang, LD
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (03): : 437 - 439
  • [29] Shipway AN, 2000, CHEMPHYSCHEM, V1, P18, DOI 10.1002/1439-7641(20000804)1:1<18::AID-CPHC18>3.0.CO
  • [30] 2-L