Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

被引：81

作者：

Mi, X. ^{[1
]}

Cady, J. V. ^{[1
,3
]}

Zajac, D. M. ^{[1
]}

Stehlik, J. ^{[1
,4
]}

Edge, L. F. ^{[2
]}

Petta, J. R. ^{[1
]}

机构：

[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[2] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

[3] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA

[4] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 04期

基金：

美国国家科学基金会;

关键词：

SUPERCONDUCTING QUBITS; CAVITY; SPIN; STORAGE;

D O I：

10.1063/1.4974536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g(c)/2 pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon. Published by AIP Publishing.

引用

页数：4

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