Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

被引：39

作者：

Kaczer, B. ^{[1
]}

Franco, J. ^{[1
]}

Mitard, J. ^{[1
]}

Roussel, Ph. J. ^{[1
]}

Veloso, A. ^{[1
]}

Groeseneken, G. ^{[1
,2
]}

机构：

[1] IMEC, Leuven, Belgium

[2] Katholieke Univ Leuven, ESAT Dept, Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

pFET; Germanium; High-k dielectrics; Negative Bias Temperature Instability (NBTI); INTERFACE; DEGRADATION; IMPACT;

D O I：

10.1016/j.mee.2009.03.061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State-of-the-art germanium-based p-channel FET devices are shown to have normal Negative Bias Temperature Instability (NBTI) behavior typically observed in Silicon-based pFETs. Furthermore, NBTI in Ge pFETs is reduced with respect to their Si counterparts. This improvement quantitatively corresponds to the reduction due to the tunneling barrier for holes formed by the Si passivation layer. A strong reduction in the permanent NBTI component is ascribed to a higher initial number of interface states. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1582 / 1584

页数：3

共 14 条

[1]

[Anonymous], 2008, THESIS

[2] Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability [J].

Grasser, T. ;

Kaczer, B. ;

Hehenberger, R. ;

Goes, W. ;

O'Connor, R. ;

Reisinger, H. ;

Gustin, W. ;

Schluender, C. .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :801-+

[3] An energy-level perspective of bias temperature instability [J].

Grasser, Tibor ;

Kaczer, Ben ;

Goes, Wolfgang .

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, :28-+

[4] Negative bias temperature instability: Recoverable versus permanent degradation [J].

Grasser, Tibor ;

Kaczer, Ben .

ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2007, :127-+

[5] NBTI degradation: From physical mechanisms to modelling [J].

Huard, V ;

Denais, M ;

Parthasarathy, C .

MICROELECTRONICS RELIABILITY, 2006, 46 (01) :1-23

[6]

Islam AE, 2008, INT EL DEVICES MEET, P107, DOI 10.1109/IEDM.2008.4796626

[7] Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation [J].

Kaczer, B. ;

De Jaeger, B. ;

Nicholas, G. ;

Martens, K. ;

Degraeve, R. ;

Houssa, M. ;

Pourtois, G. ;

Leys, F. ;

Meuris, M. ;

Groeseneken, G. .

MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) :2067-2070

[8] Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks [J].

Kaczer, B. ;

Veloso, A. ;

Roussel, Ph. J. ;

Grasser, T. ;

Groeseneken, G. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01) :459-462

[9] Ubiquitous relaxation in BTI stressing - New evaluation and insights [J].

Kaczer, B. ;

Grasser, T. ;

Roussel, Ph. J. ;

Martin-Martinez, J. ;

O'Connor, R. ;

O'Sullivan, B. J. ;

Groeseneken, G. .

2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, :20-+

[10] Impact of Si-Thickness on Interface and Device Properties for Si-passivated Ge pMOSFETs [J].

Martens, Koen ;

Mitard, Jerome ;

De Jaeger, Brice ;

Meuris, Marc ;

Maes, Herman ;

Groeseneken, Guido ;

Minucci, Franco ;

Crupi, Felice .

ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, :138-+

← 1 2 →